Fraunhofer ISE, AMOLF reveal details of record-breaking 36.1%-efficient triple-junction silicon solar cell

The two research institutes described the triple junction device's features in a new paper. The cell relies on a top cell based on gallium indium phosphide (GaInP), a middle cell relying on gallium indium arsenide phosphide (GaInAsP), and a silicon bottom cell.Germany's Fraunhofer Institute for Solar Energy Systems (Fraunhofer ISE) and Dutch research institute AMOLF have provided an extensive technical description of the record-breaking silicon-based multijunction solar cell unveiled in late September. In the paper "Wafer-bonded two-terminal III-V//Si triple-junction solar cell with power conversion ...

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