ARMONK (dpa-AFX) - Toppan Photomask said that it has reached a joint research and development agreement with IBM related to the 2 nanometer or nm logic semiconductor node, using extreme ultraviolet (EUV) lithography. The agreement also includes High-NA EUV photomask development capability on next-generation semiconductors.
Under the agreement, IBM and Toppan Photomask intend to collaborate over a five-year period, commencing in the first quarter 2024, to enhance photomask capability at the Albany NanoTech Complex in Albany, NY, USA, and Toppan Photomask's Asaka Plant in Niiza, Japan.
Copyright(c) 2024 RTTNews.com. All Rights Reserved
Copyright RTT News/dpa-AFX
© 2024 AFX News
