New tech to reduce oxygen defects in Czochralski wafers

Research from the Chin-Yi University of Technology in Taiwan revealed a novel heater design in the Czochralski silicon crystal growth process that can control and decrease oxygen concentration without incurring the costs associated with other methods, such as installing magnets or using alternative crucible materials. Researchers from the National Chin-Yi University of Technology in Taiwan proposed a novel heater design for Czochralski silicon crystal growth equipment to control and decrease oxygen concentration. The method was simulated and validated finding that the optimal design enabled oxygen ...

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